absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 11.7 i d @ v gs = 12v, t c = 100c continuous drain current 7.4 i dm pulsed drain current 47 p d @ t c = 25c max. power dissipation 25 w linear derating factor 0.2 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 173 mj i ar avalanche current 11.7 a e ar repetitive avalanche energy 2.5 mj dv/dt peak diode recovery dv/dt a 4.9 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063 in./1.6mm from case for 10s) weight 0.98 (typical) g pre-irradiation international rectifiers r5 tm technology provides high performance power mosfets for space appli- cations. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paral- leling and temperature stability of electrical param- eters. o c a radiation hardened irhf57130 power mosfet thru-hole (to-39) 3/2/00 www.irf.com 1 100v, n-channel ? technology product summary part number radiation level r ds(on) i d irhf57130 100k rads (si) 0.08 w 11.7a irhf53130 300k rads (si) 0.08 w 11.7a irhf54130 600k rads (si) 0.08 w 11.7a IRHF58130 1000k rads (si) 0.10 w 11.7a features: n single event effect (see) hardened n ultra low r ds(on) n neutron tolerant n identical pre- and post-electrical test conditions n repetitive avalanche ratings n dynamic dv/dt ratings n simple drive requirements n ease of paralleling n hermetically sealed for footnotes refer to the last page r r 5 to-39 pd - 93789a 4 .com u datasheet
irhf57130 pre-irradiation 2 www.irf.com thermal resistance parameter min typ max units test conditions r thjc junction-to-case 5.0 r thja junction-to-ambient 175 typical socket mount c/w note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) 11.7 i sm pulse source current (body diode) 47 v sd diode forward voltage 1.5 v t j = 25c, i s = 11.7a, v gs = 0v ? t rr reverse recovery time 202 ns t j = 25c, i f = 11.7a, di/dt 3 100a/ m s q rr reverse recovery charge 982 m cv dd 25v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 100 v v gs = 0v, i d = 1.0ma d bv dss / d t j temperature coefficient of breakdown 0.12 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.08 w v gs = 12v, i d = 7.4a resistance v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 8.7 s ( )v ds > 15v, i ds = 7.4a ? i dss zero gate voltage drain current 10 v ds = 80v ,v gs =0v 25 v ds = 80v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 50 v gs =12v, i d = 11.7a q gs gate-to-source charge 7.4 nc v ds = 50v q gd gate-to-drain (miller) charge 20 t d (on) turn-on delay time 25 v dd = 50v, i d = 11.7a t r rise time 100 r g = 7.5 w t d (off) turn-off delay time 35 t f fall time 30 l s + l d total inductance 7.0 measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance 1038 v gs = 0v, v ds = 25v c oss output capacitance 362 pf f = 1.0mhz c rss reverse transfer capacitance 45 na w ? nh ns m a 4 .com u datasheet
www.irf.com 3 pre-irradiation irhf57130 table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter up to 600k rads(si) 1 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 100 100 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage ? 2.0 4.0 1.5 4.0 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 100 na v gs = 20v i gss gate-to-source leakage reverse -100 -100 v gs = -20 v i dss zero gate voltage drain current 10 10 a v ds = 80v, v gs =0v r ds(on) static drain-to-source ? 0.064 0.08 w v gs = 12v, i d =7.4a on-state resistance (to-3) r ds(on) static drain-to-source ? 0.08 0.10 w v gs = 12v, i d =7.4a on-state resistance (to-39) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part numbers irhf57130, irhf53130 and irhf54130 2. part number IRHF58130 fig a. single event effect, safe operating area v sd diode forward voltage ? 1.5 1.5 v v gs = 0v, i s = 11.7a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page table 2. single event effect safe operating area ion let energy range v ds (v) (mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v br 36.7 309 39.5 100 100 100 100 100 i 59.8 341 32.5 100 100 100 35 25 au 82.3 350 28.4 100 100 80 25 0 20 40 60 80 100 120 -20 -15 -10 -5 0 vds vgs br i au 4 .com u datasheet
irhf57130 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 1000 5 7 9 11 13 15 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 150 c j t = 25 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 11.7a 1 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 4 .com u datasheet
www.irf.com 5 pre-irradiation irhf57130 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 400 800 1200 1600 2000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 50 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 11.7a v = 20v ds v = 50v ds v = 80v ds 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 v ds, drain-to-source voltage (v) 0.1 1 10 100 1000 i d , drain current (a) 10ms tc = 25c tj = 150c single pulse operation in this area limited by r ds ( on ) 4 .com u datasheet
irhf57130 pre-irradiation 6 www.irf.com fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 12v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0 2 4 6 8 10 12 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 4 .com u datasheet
www.irf.com 7 pre-irradiation irhf57130 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 12 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v 12v 25 50 75 100 125 150 0 80 160 240 320 400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 5.2a 7.4a 11.7a . 4 .com u datasheet
irhf57130 pre-irradiation 8 www.irf.com ? pulse width 300 m s; duty cycle 2% ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. 80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 50v, starting t j = 25c, l= 2.53 mh peak i l = 11.7a, v gs = 12v a i sd 11.7a, di/dt 216a/ m s, v dd 100v, t j 150c case outline and dimensions to-205af (modified to-39) footnotes: legend 1- source 2- gate 3- drain ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir european regional center: 439/445 godstone rd, whyteleafe, surrey cr3 obl, uk tel: ++ 44 (0)20 8645 8000 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 (0) 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 011 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo 171 tel: 81 (0)3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 (0)838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673 tel: 886-(0)2 2377 9936 data and specifications subject to change without notice. 3/00 4 .com u datasheet
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